Display device

ABSTRACT

A display device includes a first transistor including a gate electrode, a second transistor including a lower gate electrode, an upper gate electrode, and a first end portion electrically connected to an end portion of the first transistor, a lower gate signal line extending in a first direction, an upper gate signal line disposed on the lower gate signal line and extending in a first direction, and a first connection pattern disposed on the upper gate signal line, electrically connecting the gate electrode and a second end portion of the second transistor, and intersecting the lower gate signal line and the upper gate signal line. An entirety of the upper gate signal line overlaps a part of the lower gate signal line in an overlapping area in which the lower gate signal line or the upper gate signal line overlaps the first connection pattern.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority to and benefits of Korean PatentApplication No. 10-2020-0034543 under 35 U.S.C. § 119 filed on Mar. 20,2020 in the Korean Intellectual Property Office, the entire contents ofwhich are incorporated herein by reference.

BACKGROUND 1. Technical Field

Embodiments relate to a display device.

2. Description of the Related Art

A display device is a device displaying an image for providing visualinformation to a user. The display device may include pixels, and eachof the pixels may include a light emitting element generating light anda pixel circuit providing a driving current to the light emittingelement. The pixel circuit may include stacked conductive layers.

In the process of forming the conductive layers to form the pixelcircuit, the conductive layers may be misaligned due to misalignment ofa mask. In this case, capacitances between the conductive layers ofpixel rows may not be uniform, therefore, kickback voltages of the pixelrows may not be uniform. Accordingly, stains may be recognized in thedisplay device, and display quality of the display device may bereduced.

It is to be understood that this background of the technology sectionis, in part, intended to provide useful background for understanding thetechnology. However, this background of the technology section may alsoinclude ideas, concepts, or recognitions that were not part of what wasknown or appreciated by those skilled in the pertinent art prior to acorresponding effective filing date of the subject matter disclosedherein.

SUMMARY

Embodiments provide a display device having improved display quality.

A display device according to an embodiment may include a firsttransistor including a gate electrode disposed on a substrate; a secondtransistor including a lower gate electrode disposed on the substrate;an upper gate electrode disposed on the lower gate electrode; and afirst end portion electrically connected to an end portion of the firsttransistor; a lower gate signal line extending in a first direction, aportion of the lower gate signal line forming the lower gate electrode;an upper gate signal line disposed on the lower gate signal line andextending in the first direction, a portion of the upper gate signalline forming the upper gate electrode; and a first connection patterndisposed on the upper gate signal line, electrically connecting the gateelectrode and a second end portion of the second transistor, andintersecting the lower gate signal line and the upper gate signal line.An entirety of the upper gate signal line may overlap a part of thelower gate signal line in an overlapping area in which the lower gatesignal line or the upper gate signal line may overlap the firstconnection pattern.

In an embodiment, a width of the upper gate signal line in a seconddirection may be less than a width of the lower gate signal line in theoverlapping area in the second direction.

In an embodiment, a difference between the width of the lower gatesignal line and the width of the upper gate signal line in the seconddirection may be greater than about 1 μm.

In an embodiment, the first connection pattern may extend in theoverlapping area in the second direction.

In an embodiment, the widths of the first lower gate signal line bothinside and outside of the overlapping area in the second direction maybe substantially equal, and the widths of the first upper gate signalline both inside and outside of the overlapping area in the seconddirection may be substantially equal.

In an embodiment, the lower gate signal line may protrude in the seconddirection in the overlapping area in a plan view.

In an embodiment, the upper gate signal line may be recessed in thesecond direction in the overlapping area in a plan view.

In an embodiment, the first transistor may include a first active layerdisposed between the substrate and the gate electrode; and the secondtransistor may include a second active layer disposed between the lowergate electrode and the upper gate electrode. A first end portion of thesecond active layer may be electrically connected to an end portion ofthe first active layer.

In an embodiment, the first active layer of the first transistor mayinclude polycrystalline silicon, and the second active layer of thesecond transistor may include an oxide semiconductor.

In an embodiment, the first connection pattern may electrically connectthe gate electrode and a second end portion of the second active layerof the second transistor.

In an embodiment, the display device may further include a secondconnection pattern electrically connecting the end portion of the firstactive layer and the first end portion of the second active layer,wherein the first connection pattern and the second connection patternmay be disposed on a same layer.

A display device according to an embodiment may include a firsttransistor including a gate electrode disposed on a substrate; a secondtransistor including a lower gate electrode disposed on the substrate;an upper gate electrode disposed on the lower gate electrode; and afirst end portion electrically connected to an end portion of the firsttransistor; a lower gate signal line extending in a first direction, aportion of the lower gate signal line forming the lower gate electrode;an upper gate signal line disposed on the lower gate signal line andextending in the first direction, a portion of the upper gate signalline forming the upper gate electrode; and a first connection patterndisposed on the upper gate signal line, electrically connecting the gateelectrode and a second end portion of the second transistor, andintersecting the lower gate signal line and the upper gate signal line.An entirety of the lower gate signal line may overlap a part of theupper gate signal line in an overlapping area in which the lower gatesignal line or the upper gate signal line may overlap the firstconnection pattern.

In an embodiment, a width of the upper gate signal line in a seconddirection may be greater than a width of the lower gate signal line inthe overlapping area in the second direction.

In an embodiment, a difference between the width of the upper gatesignal line and the width of the lower gate signal line in the seconddirection may be greater than about 1 μm.

In an embodiment, the first connection pattern may extend in theoverlapping area in the second direction.

In an embodiment, the widths of the first lower gate signal line bothinside and outside of the overlapping area in the second direction maybe substantially equal, and the widths of the first upper gate signalline both inside and outside of the overlapping area in the seconddirection may be substantially equal.

In an embodiment, the lower gate signal line may be recessed in thesecond direction in the overlapping area in a plan view.

In an embodiment, the upper gate signal line may protrude in the seconddirection in the overlapping area in a plan view.

In an embodiment, the first transistor may include a first active layerdisposed between the substrate and the gate electrode, and the secondtransistor may include a second active layer disposed between the lowergate electrode and the upper gate electrode, a first end portion of thesecond active layer being electrically connected to an end portion ofthe first active layer.

In an embodiment, the first active layer of the first transistor mayinclude polycrystalline silicon, and the second active layer of thesecond transistor may include an oxide semiconductor.

In an embodiment, the first connection pattern may electrically connectthe gate electrode and a second end portion of the second active layerof the second transistor.

In an embodiment, the display device may further include a secondconnection pattern electrically connecting the end portion of the firstactive layer and the first end portion of the second active layer,wherein the first connection pattern and the second connection patternmay be disposed on a same layer.

In the display device according to the embodiments, an entirety of theupper gate signal line may overlap a part of the lower gate signal line,or an entirety of the lower gate signal line may overlap a part of theupper gate signal line in the overlapping area in which the lower gatesignal line or the upper gate signal line may overlap the firstconnection pattern, so that a capacitance between the lower gate signalline and the first connection pattern and a capacitance between theupper gate signal line and the first connection pattern may beconstantly maintained. Accordingly, a kickback voltage of the firstconnection pattern due to a gate signal applied to the lower gate signalline and the upper gate signal line may be constant. Further, stains maynot occur in the display device, therefore, display quality of thedisplay device may be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative, non-limiting embodiments will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1 is a plan view illustrating a display device according to anembodiment.

FIG. 2 is an equivalent circuit diagram illustrating a pixel accordingto an embodiment.

FIGS. 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, and 15 are layoutdiagrams illustrating an example of the pixel in FIG. 2.

FIG. 16 is a schematic cross-sectional view taken along a line I-I′ inFIG. 13.

FIG. 17 is a layout diagram illustrating an example of an area A in FIG.13.

FIG. 18 is a schematic cross-sectional view taken along a line II-II′ inFIG. 17.

FIG. 19 is a layout diagram illustrating an example of an area A in FIG.13.

FIG. 20 is a layout diagram illustrating an example of an area A in FIG.13.

FIG. 21 is a diagram illustrating a kickback voltage of a third nodebased on a second gate signal.

FIG. 22 is a layout diagram illustrating an example of an area A in FIG.13.

FIG. 23 is a schematic cross-sectional view taken along a line III-III′in FIG. 22.

FIG. 24 is a layout diagram illustrating an example of an area A in FIG.13.

FIG. 25 is a layout diagram illustrating an example of an area A in FIG.13.

FIG. 26 is a layout diagram illustrating an example of the pixel in FIG.2.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, display devices in accordance with embodiments will beexplained in detail with reference to the accompanying drawings.

Some of the parts which are not associated with the description may notbe provided in order to describe embodiments of the disclosure and likereference numerals refer to like elements throughout the specification.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Throughout the disclosure,the expression “at least one of a, b or c” indicates only a, only b,only c, both a and b, both a and c, both b and c, all of a, b, and c, orvariations thereof.

The terms “and” and “or” may be used in the conjunctive or disjunctivesense and may be understood to be equivalent to “and/or.” In thespecification and the claims, the phrase “at least one of” is intendedto include the meaning of “at least one selected from the group of” forthe purpose of its meaning and interpretation. For example, “at leastone of A and B” may be understood to mean “A, B, or A and B.”

It will be understood that although the terms “first,” “second,” etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another. For example, a first elementreferred to as a first element in one embodiment may be referred to as asecond element in another embodiment without departing from the scope ofthe appended claims.

As used herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “comprises” and/or“comprising” “includes” and/or “including”, “have” and/or “having” areused in this specification, they or it may specify the presence ofstated features, integers, steps, operations, elements and/orcomponents, but do not preclude the presence or addition of otherfeatures, integers, steps, operations, elements, components, and/or anycombination thereof.

When a layer, film, region, substrate, or area, or element is referredto as being “on” another layer, film, region, substrate, or area, orelement, it may be directly on the other film, region, substrate, orarea, or element, or intervening films, regions, substrates, or areas,or elements may be present therebetween. Conversely, when a layer, film,region, substrate, or area, or element, is referred to as being“directly on” another layer, film, region, substrate, or area, orelement, intervening layers, films, regions, substrates, or areas, maybe absent therebetween. Further when a layer, film, region, substrate,or area, or element, is referred to as being “below” another layer,film, region, substrate, or area, or element, it may be directly belowthe other layer, film, region, substrate, or area, or element, orintervening layers, films, regions, substrates, or areas, or elements,may be present therebetween. Conversely, when a layer, film, region,substrate, or area, or element, is referred to as being “directly below”another layer, film, region, substrate, or area, or element, interveninglayers, films, regions, substrates, or areas, or elements may be absenttherebetween. Further, “over” or “on” may include positioning on orbelow an object and does not necessarily imply a direction based upongravity.

The spatially relative terms “below”, “beneath”, “lower”, “above”,“upper”, or the like, may be used herein for ease of description todescribe the relations between one element or component and anotherelement or component as illustrated in the drawings. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation, in addition tothe orientation depicted in the drawings. For example, in the case wherea device illustrated in the drawing is turned over, the devicepositioned “below” or “beneath” another device may be placed “above”another device. Accordingly, the illustrative term “below” may includeboth the lower and upper positions. The device may also be oriented inother directions and thus the spatially relative terms may beinterpreted differently depending on the orientations.

Sizes of components in the drawings may be exaggerated for convenienceof explanation. In other words, since sizes and thicknesses ofcomponents in the drawings are arbitrarily illustrated for convenienceof explanation, the following embodiments are not limited thereto.

Additionally, the terms “overlap” or “overlapped” mean that a firstobject may be above or below or to a side of a second object, and viceversa. Additionally, the term “overlap” may include layer, stack, faceor facing, extending over, covering or partly covering or any othersuitable term as would be appreciated and understood by those ofordinary skill in the art. The terms “face” and “facing” mean that afirst element may directly or indirectly oppose a second element. In acase in which a third element intervenes between the first and secondelement, the first and second element may be understood as beingindirectly opposed to one another, although still facing each other.When an element is described as ‘not overlapping’ or ‘to not overlap’another element, this may include that the elements are spaced apartfrom each other, offset from each other, or set aside from each other orany other suitable term as would be appreciated and understood by thoseof ordinary skill in the art.

In the specification, an expression such as “A and/or B” indicates A, B,or A and B. Also, an expression such as “at least one of A and B”indicates A, B, or A and B.

In embodiments below, when a component is referred to as being “on aplane,” it is understood that a component is viewed from the top, andwhen a component is referred to as being “on a schematic cross section,”it is understood that the component is vertically cut and viewed fromthe side.

It will be understood that when a layer, region, or component isreferred to as being “connected” or “coupled” to another layer, region,or component, it may be “directly connected” or “directly coupled” tothe other layer, region, or component and/or may be “indirectlyconnected” or “indirectly coupled” to the other layer, region, orcomponent with other layers, regions, or components interposedtherebetween. For example, it will be understood that when a layer,region, or component is referred to as being “electrically connected” or“electrically coupled” to another layer, region, or component, it may be“directly electrically connected” or “directly electrically coupled” tothe other layer, region, or component and may be “indirectlyelectrically connected” or “indirectly electrically coupled” to theother layer, region, or component with other layers, regions, orcomponents interposed therebetween.

Also, when an element is referred to as being “in contact” or“contacted” or the like to another element, the element may be in“electrical contact” or in “physical contact” with another element; orin “indirect contact” or in “direct contact” with another element.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” may mean within one or morestandard deviations, or within ±30%, 20%, 10%, 5% of the stated value.

In the following examples, the x-axis, the y-axis and the z-axis are notlimited to three axes of the rectangular coordinate system, and may beinterpreted in a broader sense. For example, the x-axis, the y-axis, andthe z-axis may be perpendicular to one another, or may representdifferent directions that may not be perpendicular to one another.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which embodiments pertain. In addition,it will be further understood that terms, such as those defined incommonly-used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein.

FIG. 1 is a plan view illustrating a display device according to anembodiment.

Referring to FIG. 1, a display device according to an embodiment mayinclude pixels PX. Each pixel PX may refer to a single area defined bydividing a display area in a plan view for displaying a color, and onepixel PX may display one predetermined basic color. In other words, onepixel PX may be a minimum unit that may display an independent colorfrom another pixel PX. The pixels PX may be arranged or disposed along afirst direction DR1 and a second direction DR2 crossing or intersectingthe first direction DR1.

FIG. 2 is an equivalent circuit diagram illustrating a pixel accordingto an embodiment.

Referring to FIG. 2, a pixel PX according to an embodiment may include apixel circuit PC and a light emitting element EL. The pixel circuit PCmay provide a driving current to the light emitting element EL. Thelight emitting element EL may emit light based on the driving currentprovided from the pixel circuit PC. The pixel circuit PC may include atleast one transistor and at least one capacitor to generate the drivingcurrent.

In an embodiment, the pixel circuit PC may include a first transistorT1, a second transistor T2, a third transistor T3, a fourth transistorT4, a fifth transistor T5, a sixth transistor T6, a seventh transistorT7, and a capacitor CAP. However, the disclosure is not limited thereto,and in an embodiment, the pixel circuit PC may include two to six oreight or more transistors and/or two or more capacitors.

The first transistor T1 may be electrically connected between a firstnode N1 and a second node N2. A gate electrode of the first transistorT1 may be electrically connected to a third node N3. The firsttransistor T1 may generate the driving current based on a voltagebetween the first node N1 and the third node N3.

The second transistor T2 may be electrically connected between a dataline 171 and the first node N1. A gate electrode of the secondtransistor T2 may receive a first gate signal GS1. The second transistorT2 may transmit a data voltage DV to the first node N1 based on thefirst gate signal GS1.

The third transistor T3 may be electrically connected between the secondnode N2 and the third node N3. A gate electrode of the third transistorT3 may receive a second gate signal GS2. The third transistor T3 mayelectrically connect the second node N2 and the third node N3 based onthe second gate signal GS2 to compensate a threshold voltage of thefirst transistor T1.

The fourth transistor T4 may be electrically connected between a firstinitialization voltage line 133 and the third node N3. A gate electrodeof the fourth transistor T4 may receive a third gate signal GS3. In anembodiment, the third gate signal GS3 may be a first gate signal appliedto an (N−1)-th pixel row in a case that the pixel PX is included in anN-th pixel row. The fourth transistor T4 may receive a firstinitialization voltage IV1 from the first initialization voltage line133, and may transmit the first initialization voltage IV1 to the thirdnode N3 based on the third gate signal GS3 to initialize the gateelectrode of the first transistor T1.

The fifth transistor T5 may be electrically connected between a powervoltage line 172 and the first node N1. A gate electrode of the fifthtransistor T5 may receive an emission control signal EM. The powervoltage line 172 may transmit a first power voltage VDD from a firstpower source.

The sixth transistor T6 may be electrically connected between the secondnode N2 and a fourth node N4. A gate electrode of the sixth transistorT6 may receive the emission control signal EM. The fifth transistor T5and the sixth transistor T6 may transmit the driving current generatedfrom the first transistor T1 to the light emitting element EL based onthe emission control signal EM.

The seventh transistor T7 may be electrically connected between a secondinitialization voltage line 161 and the fourth node N4. A gate electrodeof the seventh transistor T7 may receive a fourth gate signal GS4. In anembodiment, the fourth gate signal GS4 may be a first gate signalapplied to an (N+1)-th pixel row in a case that the pixel PX is includedin an N-th pixel row. The seventh transistor T7 may receive a secondinitialization voltage IV2 from the second initialization voltage line161, and may transmit the second initialization voltage IV2 to thefourth node N4 based on the fourth gate signal GS4 to initialize thelight emitting element EL.

In an embodiment, each of the first transistor T1, the second transistorT2, the fifth transistor T5, the sixth transistor T6, and the seventhtransistor T7 may be a transistor having a single gate structure, andeach of the third transistor T3 and the fourth transistor T4 may be atransistor having a double gate structure. However, the disclosure isnot limited thereto. In such an embodiment, the gate electrode of eachof the third transistor T3 and the fourth transistor T4 may include alower gate electrode and an upper gate electrode, and the lower gateelectrode and the upper gate electrode may be electrically connected toeach other.

In an embodiment, an active layer of each of the first transistor T1,the second transistor T2, the fifth transistor T5, the sixth transistorT6, and the seventh transistor T7 may be formed of polycrystallinesilicon, and an active layer of each of the third transistor T3 and thefourth transistor T4 may be formed of an oxide semiconductor. In anembodiment, each of the first transistor T1, the second transistor T2,the fifth transistor T5, the sixth transistor T6, and the seventhtransistor T7 may be a PMOS, and each of the third transistor T3 and thefourth transistor T4 may be an NMOS. However, the disclosure is notlimited thereto.

The capacitor CAP may be electrically connected between the powervoltage line 172 and the third node N3. The capacitor CAP may maintainthe voltage between the first node N1 and the third node N3 in a casethat the second transistor T2 is turned off, so that the light emittingelement EL may emit light.

The light emitting element EL may be electrically connected between thefourth node N4 and a second power source. The second power source mayprovide a second power voltage VSS. In an embodiment, the second powervoltage VSS may be less than the first power voltage VDD. The lightemitting element EL may emit light based on the driving currenttransmitted from the pixel circuit PC.

FIGS. 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, and 15 are layoutdiagrams illustrating an example of the pixel PX in FIG. 2. FIG. 16 is aschematic cross-sectional view taken along a line I-I′ in FIG. 13.

Referring to FIGS. 2 to 16, the pixel PX may include a first activelayer 110, a first conductive layer 120, a second conductive layer 130,a second active layer 140, a third conductive layer 150, a fourthconductive layer 160, a fifth conductive layer 170, a first electrode180, an emission layer 190, and a second electrode 200 which may bedisposed on a substrate 100.

The substrate 100 may be an insulating substrate including glass,quartz, plastic, or the like within the spirit and the scope of thedisclosure. In an embodiment, the substrate 100 may include a firstflexible layer, a first barrier layer disposed on the first flexiblelayer, a second flexible layer disposed on the first barrier layer, anda second barrier layer disposed on the second flexible layer. The firstflexible layer and the second flexible layer may include an organicinsulation material such as polyimide (PI) or the like within the spiritand the scope of the disclosure. The first barrier layer and the secondbarrier layer may include an inorganic insulation material such assilicon oxide, silicon nitride, amorphous silicon, or the like withinthe spirit and the scope of the disclosure.

The first active layer 110 may be disposed on the substrate 100. In anembodiment, the first active layer 110 may include polycrystallinesilicon. However, the disclosure is not limited thereto, and in anembodiment, the first active layer 110 may include amorphous silicon, anoxide semiconductor, or the like within the spirit and the scope of thedisclosure.

A buffer layer may be disposed between the substrate 100 and the firstactive layer 110. The buffer layer may block impurities from beingpermeated toward above the substrate 100 through the substrate 100. Thebuffer layer may provide a planarized upper surface above the substrate100. The buffer layer may include an inorganic insulation material suchas silicon oxide, silicon nitride, silicon oxynitride, or the likewithin the spirit and the scope of the disclosure. The buffer layer maybe omitted.

The first conductive layer 120 may be disposed on the first active layer110. The first conductive layer 120 may include a conductive materialsuch as molybdenum (Mo), copper (Cu), or the like within the spirit andthe scope of the disclosure.

A first insulation layer 101 may be disposed between the first activelayer 110 and the first conductive layer 120. The first insulation layer101 may include an inorganic insulation material such as silicon oxide,silicon nitride, silicon oxynitride, or the like within the spirit andthe scope of the disclosure.

The first conductive layer 120 may include a first gate signal line 121,an emission control signal line 122, and a conductive pattern 123. Thefirst gate signal line 121 may extend in the first direction DR1. Theemission control signal line 122 may be spaced apart from the first gatesignal line 121, and may extend in the first direction DR1. Theconductive pattern 123 may be positioned or disposed between the firstgate signal line 121 and the emission control signal line 122.

A first portion of the first gate signal line 121 overlapping the firstactive layer 110 may form the gate electrode of the second transistorT2, and a second portion of the first gate signal line 121 overlappingthe first active layer 110 may form the gate electrode of the seventhtransistor T7. A portion of the first active layer 110 overlapping thegate electrode of the second transistor T2 may be a channel region ofthe second transistor T2, and a portion of the first active layer 110overlapping the gate electrode of the seventh transistor T7 may be achannel region of the seventh transistor T7. Accordingly, the firstactive layer 110 and the first portion of the first gate signal line 121may form the second transistor T2, and the first active layer 110 andthe second portion of the first gate signal line 121 may form theseventh transistor T7.

A first portion of the emission control signal line 122 overlapping thefirst active layer 110 may form the gate electrode of the fifthtransistor T5, and a second portion of the emission control signal line122 overlapping the first active layer 110 may form the gate electrodeof the sixth transistor T6. A portion of the first active layer 110overlapping the gate electrode of the fifth transistor T5 may be achannel region of the fifth transistor T5, and a portion of the firstactive layer 110 overlapping the gate electrode of the sixth transistorT6 may be a channel region of the sixth transistor T6. Accordingly, thefirst active layer 110 and the first portion of the emission controlsignal line 122 may form the fifth transistor T5, and the first activelayer 110 and the second portion of the emission control signal line 122may form the sixth transistor T6.

A portion of the conductive pattern 123 overlapping the first activelayer 110 may form the gate electrode of the first transistor T1. Aportion of the first active layer 110 overlapping the gate electrode ofthe first transistor T1 may be a channel region of the first transistorT1. Accordingly, the first active layer 110 and the portion of theconductive pattern 123 may form the first transistor T1.

The second conductive layer 130 may be disposed on the first conductivelayer 120. The second conductive layer 130 may include a conductivematerial such as molybdenum (Mo), copper (Cu), or the like within thespirit and the scope of the disclosure.

A second insulation layer 102 may be disposed between the firstconductive layer 120 and the second conductive layer 130. The secondinsulation layer 102 may include an inorganic insulation material suchas silicon oxide, silicon nitride, silicon oxynitride, or the likewithin the spirit and the scope of the disclosure.

The second conductive layer 130 may include a first lower gate signalline 131, a second lower gate signal line 132, the first initializationvoltage line 133, and a conductive line 134. The first lower gate signalline 131 may extend in the first direction DR1. The second lower gatesignal line 132 may be spaced apart from the first lower gate signalline 131, and may extend in the first direction DR1. The firstinitialization voltage line 133 may be spaced apart from the secondlower gate signal line 132, and may extend in the first direction DR1.The conductive line 134 may be spaced apart from the first lower gatesignal line 131, and may extend in the first direction DR1.

The conductive line 134 may overlap the conductive pattern 123. Theconductive pattern 123 and the conductive line 134 may form thecapacitor CAP.

The second active layer 140 may be disposed on the second conductivelayer 130. The second active layer 140 may not overlap the first activelayer 110. In an embodiment, the second active layer 140 may include anoxide semiconductor. However, the disclosure is not limited thereto, andin an embodiment, the second active layer 140 may include amorphoussilicon, polycrystalline silicon, or the like within the spirit and thescope of the disclosure.

A third insulation layer 103 may be disposed between the secondconductive layer 130 and the second active layer 140. The thirdinsulation layer 103 may include an inorganic insulation material suchas silicon oxide, silicon nitride, silicon oxynitride, or the likewithin the spirit and the scope of the disclosure.

The third conductive layer 150 may be disposed on the second activelayer 140. The third conductive layer 150 may include a conductivematerial such as molybdenum (Mo), copper (Cu), or the like within thespirit and the scope of the disclosure.

A fourth insulation layer 104 may be disposed between the second activelayer 140 and the third conductive layer 150. The fourth insulationlayer 104 may include an inorganic insulation material such as siliconoxide, silicon nitride, silicon oxynitride, or the like within thespirit and the scope of the disclosure.

The third conductive layer 150 may include a first upper gate signalline 151 and a second upper gate signal line 152. The first upper gatesignal line 151 may extend in the first direction DR1. The second uppergate signal line 152 may be spaced apart from the first upper gatesignal line 151, and may extend in the first direction DR1.

A portion of the first lower gate signal line 131 overlapping the secondactive layer 140 may form the lower gate electrode of the thirdtransistor T3, and a portion of the first upper gate signal line 151overlapping the second active layer 140 may form the upper gateelectrode of the third transistor T3. A portion of the second activelayer 140 overlapping the lower gate electrode and the upper gateelectrode of the third transistor T3 may be a channel region of thethird transistor T3. Accordingly, the portion of the first lower gatesignal line 131, the second active layer 140, and the portion of thefirst upper gate signal line 151 may form the third transistor T3. Thethird transistor T3 may be a transistor having a double gate structure.

A portion of the second lower gate signal line 132 overlapping thesecond active layer 140 may form the lower gate electrode of the fourthtransistor T4, and a portion of the second upper gate signal line 152overlapping the second active layer 140 may form the upper gateelectrode of the fourth transistor T4. A portion of the second activelayer 140 overlapping the lower gate electrode and the upper gateelectrode of the fourth transistor T4 may be a channel region of thefourth transistor T4. Accordingly, the portion of the second lower gatesignal line 132, the second active layer 140, and the portion of thesecond upper gate signal line 152 may form the fourth transistor T4. Thefourth transistor T4 may be a transistor having a double gate structure.

The fourth conductive layer 160 may be disposed on the third conductivelayer 150. The fourth conductive layer 160 may include a conductivematerial such as aluminum (Al), titanium (Ti), copper (Cu), or the likewithin the spirit and the scope of the disclosure. In an embodiment, thefourth conductive layer 160 may have a multilayer structure including aTi layer, an Al layer, and a Ti layer which may be stacked.

A fifth insulation layer 105 may be disposed between the thirdconductive layer 150 and the fourth conductive layer 160. The fifthinsulation layer 105 may include an inorganic insulation material suchas silicon oxide, silicon nitride, silicon oxynitride, or the likeand/or an organic insulation material such as polyimide (PI) or the likewithin the spirit and the scope of the disclosure.

The fourth conductive layer 160 may include the second initializationvoltage line 161, a first connection pattern 162, a second connectionpattern 163, a third connection pattern 164, a first contact pattern165, a second contact pattern 166, and a third contact pattern 167. Thesecond initialization voltage line 161 may extend in the first directionDR1. The second initialization voltage line 161 may be electricallyconnected to the first active layer 110 through a first contact holeCH1. Accordingly, the second initialization voltage line 161 may beelectrically connected to the seventh transistor T7.

The first connection pattern 162 may be spaced apart from the secondinitialization voltage line 161. The first connection pattern 162 may beelectrically connected to the conductive pattern 123 through a secondcontact hole CH2, and may be electrically connected to the second activelayer 140 through a third contact hole CH3. Accordingly, the firstconnection pattern 162 may electrically connect the gate electrode ofthe first transistor T1 and a second end portion of the third transistorT3. For example, the first connection pattern 162 may electricallyconnect the gate electrode of the first transistor T1 and a second endportion 142 of the second active layer 140.

The second connection pattern 163 may be spaced apart from the firstconnection pattern 162. The second connection pattern 163 may beelectrically connected to the first active layer 110 through a fourthcontact hole CH4, and may be electrically connected to the second activelayer 140 through a fifth contact hole CH5. Accordingly, the secondconnection pattern 163 may electrically connect an end portion of thefirst transistor T1 and a first end portion of the third transistor T3.As an example, the second connection pattern 163 may electricallyconnect an end portion 111 of the first active layer 110 and a first endportion 141 of the second active layer 140.

The third connection pattern 164 may be spaced apart from the secondconnection pattern 163. The third connection pattern 164 may beelectrically connected to the first initialization voltage line 133through a sixth contact hole CH6, and may be electrically connected tothe second active layer 140 through a seventh contact hole CH7.Accordingly, the third connection pattern 164 may electrically connectthe first initialization voltage line 133 and the second active layer140. The first initialization voltage line 133 may be electricallyconnected to the fourth transistor T4 through the third connectionpattern 164.

The first contact pattern 165 may be spaced apart from the thirdconnection pattern 164. The first contact pattern 165 may beelectrically connected to the first active layer 110 through an eighthcontact hole CH8. Accordingly, the first contact pattern 165 may beelectrically connected to the second transistor T2.

The second contact pattern 166 may be spaced apart from the firstcontact pattern 165. The second contact pattern 166 may be electricallyconnected to the first active layer 110 through a ninth contact holeCH9, and may be electrically connected to the conductive line 134through a tenth contact hole CH10. Accordingly, the second contactpattern 166 may be electrically connected to the fifth transistor T5 andthe capacitor CAP.

The third contact pattern 167 may be spaced apart from the secondcontact pattern 166. The third contact pattern 167 may be electricallyconnected to the first active layer 110 through an eleventh contact holeCH11. Accordingly, the third contact pattern 167 may be electricallyconnected to the sixth transistor T6.

The fifth conductive layer 170 may be disposed on the fourth conductivelayer 160. The fifth conductive layer 170 may include a conductivematerial such as aluminum (Al), titanium (Ti), copper (Cu), or the likewithin the spirit and the scope of the disclosure. In an embodiment, thefifth conductive layer 170 may have a multilayer structure including aTi layer, an Al layer, and a Ti layer which may be stacked.

A sixth insulation layer 106 may be disposed between the fourthconductive layer 160 and the fifth conductive layer 170. The sixthinsulation layer 106 may include an inorganic insulation material suchas silicon oxide, silicon nitride, silicon oxynitride, or the likeand/or an organic insulation material such as polyimide (PI) or the likewithin the spirit and the scope of the disclosure.

The fifth conductive layer 170 may include the data line 171, the powervoltage line 172, and a fourth contact pattern 173. The data line 171may extend in the second direction DR2. The date line 171 may beelectrically connected to the first contact pattern 165 through atwelfth contact hole CH12. Accordingly, the date line 171 may beelectrically connected to the second transistor T2 through the firstcontact pattern 165.

The power voltage line 172 may be spaced apart from the date line 171,and may extend in the second direction DR2. The power voltage line 172may be electrically connected to the second contact pattern 162 througha thirteenth contact hole CH13. Accordingly, the power voltage line 172may be electrically connected to the fifth transistor T5 and thecapacitor CAP through the second contact pattern 166.

The fourth contact pattern 173 may be spaced apart from the powervoltage line 172. The fourth contact pattern 173 may be electricallyconnected to the third contact pattern 167 through a fourteenth contacthole CH14.

The first electrode 180 may be disposed on the fifth conductive layer170. The first electrode 180 may include a conductive material such as ametal, an alloy, a transparent conductive oxide, or the like within thespirit and the scope of the disclosure. For example, the first electrode180 may include silver (Ag), indium tin oxide (ITO), or the like withinthe spirit and the scope of the disclosure. In an embodiment, the firstelectrode 180 may have a multilayer structure including an ITO layer, anAg layer, and an ITO layer which may be stacked.

A seventh insulation layer 107 may be disposed between the fifthconductive layer 170 and the first electrode 180. The seventh insulationlayer 107 may include an inorganic insulation material such as siliconoxide, silicon nitride, silicon oxynitride, or the like and/or anorganic insulation material such as polyimide (PI) or the like withinthe spirit and the scope of the disclosure.

The first electrode 180 may be electrically connected to the fourthcontact pattern 173 through a contact hole. Accordingly, the firstelectrode 180 may be electrically connected to the sixth transistor T6through the third contact pattern 167 and the fourth contact pattern173.

An eighth insulation layer 108 may be disposed on the first electrode180. The eighth insulation layer 108 may cover or overlap the firstelectrode 180, and may be disposed on the seventh insulation layer 107.The eighth insulation layer 108 may have a pixel opening exposing atleast a portion of the first electrode 180. In an embodiment, the pixelopening may expose a central portion of the first electrode 180, and theeighth insulation layer 108 may cover or overlap a peripheral portion ofthe first electrode 180. The eighth insulation layer 108 may include anorganic insulation material such as polyimide (PI) or the like withinthe spirit and the scope of the disclosure.

The emission layer 190 may be disposed on the first electrode 180. Theemission layer 190 may be disposed on the first electrode 180 exposed bythe pixel opening. The emission layer 190 may include at least one of anorganic light emitting material and a quantum dot.

In an embodiment, the organic light emitting material may include a lowmolecular organic compound or a high molecular organic compound. Forexample, the low molecular organic compound may include copperphthalocyanine, diphenylbenzidine (N, N′-diphenylbenzidine),trihydroxyquinoline aluminum (tris-(8-hydroxyquinoline)aluminum), andthe like within the spirit and the scope of the disclosure. The highmolecular organic compound may include poly ethylenedioxythiophene(poly(3,4-ethylenedioxythiophene), polyaniline, polyphenylenevinylene,polyfluorene, and the like within the spirit and the scope of thedisclosure.

In an embodiment, the quantum dot may include a core including a groupII-VI compound, a group III-V compound, a group IV-VI compound, a groupIV element, a group IV compound, and a combination thereof. In anembodiment, the quantum dot may have a core-shell structure including acore and a shell surrounding the core. The shell may prevent chemicaldenaturation of the core, thereby serving as a protective layer formaintaining semiconductor characteristics and a charging layer forimparting electrophoretic characteristics to the quantum dot.

The second electrode 200 may be disposed on the emission layer 190. Inan embodiment, the second electrode 200 may also be disposed on theeighth insulation layer 108. The second electrode 200 may include aconductive material such as a metal, an alloy, a transparent conductiveoxide, or the like within the spirit and the scope of the disclosure.For example, the second electrode 200 may include aluminum (Al),platinum (Pt), silver (Ag), magnesium (Mg), gold (Au), chromium (Cr),tungsten (W), titanium (Ti), or the like within the spirit and the scopeof the disclosure. The first electrode 180, the emission layer 190, andthe second electrode 200 may form the light emitting element EL.

FIG. 17 is a layout diagram illustrating an example of an area A in FIG.13. FIG. 18 is a schematic cross-sectional view taken along a lineII-II′ in FIG. 17.

Referring to FIGS. 17 and 18, the first upper gate signal line 151 maybe disposed on the first lower gate signal line 131, and the firstconnection pattern 162 may be disposed on the first upper gate signalline 151. The first connection pattern 162 may cross or intersect thefirst lower gate signal line 131 and the first upper gate signal line151 which may extend in the first direction DR1. An area in which thefirst lower gate signal line 131 or the first upper gate signal line 151may overlap the first connection pattern 162 may be defined as anoverlapping area OA. The first connection pattern 162 may extend in thesecond direction DR2 in the overlapping area OA.

A width 151W of the first upper gate signal line 151 in the seconddirection DR2 may be less than a width 131W of the first lower gatesignal line 131 in the second direction DR2 in the overlapping area OA.An entirety of the first upper gate signal line 151 may overlap a partof the first lower gate signal line 131 in the overlapping area OA. Inother words, a portion of the first lower gate signal line 131 mayoverlap the first upper gate signal line 151 in the overlapping area OA,and another portion of the first lower gate signal line 131 may notoverlap the first upper gate signal line 151 in the overlapping area OA.For example, a central portion of the first lower gate signal line 131in the second direction DR2 may overlap the first upper gate signal line151 in the overlapping area OA, and side portions of the first lowergate signal line 131 in the second direction DR2 may not overlap thefirst upper gate signal line 151 in the overlapping area OA.

In a comparative example, in a case that a first lower gate signal lineand a first upper gate signal line partially overlap each other in anoverlapping area, due to tolerance in the process of forming the firstupper gate signal line on the first lower gate signal line, acapacitance between the first lower gate signal line and the first uppergate signal line may be changed. However, in an embodiment, the width151W of the first upper gate signal line 151 in the second direction DR2may be less than the width 131W of the first lower gate signal line 131in the second direction DR2 in the overlapping area OA, and an entiretyof the first upper gate signal line 151 may overlap a part of the firstlower gate signal line 131 in the overlapping area OA. Therefore,although tolerance in the process of forming the first upper gate signalline 151 on the first lower gate signal line 131 is considered, acapacitance between the first lower gate signal line 131 and the firstconnection pattern 162 and a capacitance between the first upper gatesignal line 151 and the first connection pattern 162 may be constantlymaintained.

In an embodiment, a value subtracting the width 151W of the first uppergate signal line 151 in the second direction DR2 from the width 131W ofthe first lower gate signal line 131 in the second direction DR2 in theoverlapping area OA may be greater than about 1 μm. In other words, thedifference between the width 131W of the first lower gate signal line131 in the second direction DR2 in the overlapping area OA and the width151W of the first upper gate signal line 151 in the second direction DR2may be greater than about 1 μm. A tolerance less than about 0.5 μm inthe second direction DR2 may occur in the process of forming the firstupper gate signal line 151 on the first lower gate signal line 131.Since the value subtracting the width 151W of the first upper gatesignal line 151 in the second direction DR2 from the width 131W of thefirst lower gate signal line 131 in the second direction DR2 may begreater than about 1 μm in the overlapping area OA, although thetolerance less than about 0.5 μm in the second direction DR2 may occurin the process of forming the first upper gate signal line 151 on thefirst lower gate signal line 131, an entirety of the first upper gatesignal line 151 may overlap a part of the first lower gate signal line131 in the overlapping area OA.

In an embodiment, each of a width of the first lower gate signal line131 in the second direction DR2 and a width of the first upper gatesignal line 151 in the second direction DR2 may be constant. Forexample, a width of the first lower gate signal line 131 in the seconddirection DR2 outside the overlapping area OA may be substantially equalto the width 131W of the first lower gate signal line 131 in the seconddirection DR2 inside the overlapping area OA, and a width of the firstupper gate signal line 151 in the second direction DR2 outside theoverlapping area OA may be substantially equal to the width 151W of thefirst upper gate signal line 151 in the second direction DR2 inside theoverlapping area OA.

FIG. 19 is a layout diagram illustrating an example of the area A inFIG. 13. FIG. 20 is a layout diagram illustrating an example of the areaA in FIG. 13.

Referring to FIG. 19, in an embodiment, the first lower gate signal line131 may protrude in the second direction DR2 in a plan view in theoverlapping area OA. In such an embodiment, a portion of the first uppergate signal line 151 outside the overlapping area OA may not overlap thefirst lower gate signal line 131, and the first lower gate signal line131 may have a protruding portion 131P protruding in the seconddirection DR2 in the overlapping area OA. For example, a width of thefirst lower gate signal line 131 in the second direction DR2 outside theoverlapping area OA may be less than a width 131W of the first lowergate signal line 131 in the second direction DR2 inside the overlappingarea OA, and a width of the first upper gate signal line 151 in thesecond direction DR2 outside the overlapping area OA may besubstantially equal to a width 151W of the first upper gate signal line151 in the second direction DR2 inside the overlapping area OA.

Referring to FIG. 20, in an embodiment, the first upper gate signal line151 may be recessed in the second direction DR2 in a plan view in theoverlapping area OA. In such an embodiment, a portion of the first uppergate signal line 151 outside the overlapping area OA may not overlap thefirst lower gate signal line 131, and the first upper gate signal line151 may have a recessed portion 151R recessed in the second directionDR2 in the overlapping area OA. For example, a width of the first lowergate signal line 131 in the second direction DR2 outside the overlappingarea OA may be substantially equal to a width 131W of the first lowergate signal line 131 in the second direction DR2 inside the overlappingarea OA, and a width of the first upper gate signal line 151 in thesecond direction DR2 outside the overlapping area OA may be greater thana width 151W of the first upper gate signal line 151 in the seconddirection DR2 inside the overlapping area OA.

FIG. 21 is a diagram illustrating a kickback voltage of the third nodeN3 based on the second gate signal GS2.

Referring to FIGS. 2, 18, and 21, in a case that the second gate signalGS2 applied to the gate electrode of the third transistor T3 is changedfrom a low level to a high level, the second node N2 and the third nodeN3 may be electrically connected to each other such that the firsttransistor T1 may be diode-connected. Then, in a case that the secondtransistor T2 is turned-on based on the first gate signal GS1, the datavoltage DV may be applied to the first node N1, therefore, a voltageV_N3 in which a threshold voltage of the first transistor T1 may becompensated from the data voltage DV may be applied to the third nodeN3. Then, in a case that the second gate signal GS2 is changed from thehigh level to the low level, the voltage V_N3 of the third node N3 maybe increase or decrease as much as a kickback voltage V_KB.

Because capacitances may be formed between the first lower gate signalline 131 and the first connection pattern 162 and between the firstupper gate signal line 151 and the first connection pattern 162 in theoverlapping area OA, the first lower gate signal line 131 and the firstupper gate signal line 151 may electrically affect the first connectionpattern 162. In a case that the second gate signal GS2 which the firstlower gate signal line 131 and the first upper gate signal line 151transmit is changed from the high level to the lower level, the voltageV_N3 of the first connection pattern 162 that may be the third node N3may increase or decrease as much as the kickback voltage V_KB.

In a comparative example, in a case that kickback voltages V_KB occurredin pixel rows may be different from each other, stains may occur in thedisplay device. However, in an embodiment, because the capacitancebetween the first lower gate signal line 131 and the first connectionpattern 162 and the capacitance between the first upper gate signal line151 and the first connection pattern 162 may be constantly maintained,kickback voltages V_KB that occurred in pixel rows may be substantiallyequal to each other, therefore, stains may not occur in the displaydevice, and display quality of the display device may be improved.

Hereinafter, descriptions of elements of a display device described withreference to FIGS. 22 to 25, which may be substantially the same as orsimilar to those of the display device described with reference to FIGS.17 to 20, will not be repeated.

FIG. 22 is a layout diagram illustrating an example of the area A inFIG. 13. FIG. 23 is a schematic cross-sectional view taken along a lineIII-III′ in FIG. 22.

Referring to FIGS. 22 and 23, a width 151W of the first upper gatesignal line 151 in the second direction DR2 may be greater than a width131W of the first lower gate signal line 131 in the second direction DR2in the overlapping area OA. An entirety of the first lower gate signalline 131 may overlap a part of the first upper gate signal line 151 inthe overlapping area OA. In other words, a portion of the first uppergate signal line 151 may overlap the first lower gate signal line 131 inthe overlapping area OA, and another portion of the first upper gatesignal line 151 may not overlap the first lower gate signal line 131 inthe overlapping area OA. For example, a central portion of the firstupper gate signal line 151 in the second direction DR2 may overlap thefirst lower gate signal line 131 in the overlapping area OA, and sideportions of the first upper gate signal line 151 in the second directionDR2 may not overlap the first lower gate signal line 131 in theoverlapping area OA.

In an embodiment, the width 151W of the first upper gate signal line 151in the second direction DR2 may be greater than the width 131W of thefirst lower gate signal line 131 in the second direction DR2 in theoverlapping area OA, and an entirety of the first lower gate signal line131 may overlap a part of the first upper gate signal line 151 in theoverlapping area OA. Therefore, although tolerance in the process offorming the first upper gate signal line 151 on the first lower gatesignal line 131 is considered, the first upper gate signal line 151 mayshield the first lower gate signal line 131 from the first connectionpattern 162. Accordingly, a capacitance between the first lower gatesignal line 131 and the first connection pattern 162 and a capacitancebetween the first upper gate signal line 151 and the first connectionpattern 162 may be constantly maintained.

In an embodiment, a value subtracting the width 131W of the first lowergate signal line 131 in the second direction DR2 from the width 151W ofthe first upper gate signal line 151 in the second direction DR2 in theoverlapping area OA may be greater than about 1 μm. In other words, thedifference between the width 151W of the first upper gate signal line151 in the second direction DR2 in the overlapping area OA and the width131W of the first lower gate signal line 131 in the second direction DR2may be greater than about 1 μm. A tolerance less than about 0.5 μm inthe second direction DR2 may occur in the process of forming the firstupper gate signal line 151 on the first lower gate signal line 131.Since the value subtracting the width 131W of the first lower gatesignal line 131 in the second direction DR2 from the width 151W of thefirst upper gate signal line 151 in the second direction DR2 is greaterthan about 1 μm in the overlapping area OA, although the tolerance lessthan about 0.5 μm in the second direction DR2 may occur in the processof forming the first upper gate signal line 151 on the first lower gatesignal line 131, an entirety of the first lower gate signal line 131 mayoverlap a part of the first upper gate signal line 151 in theoverlapping area OA.

In an embodiment, each of a width of the first lower gate signal line131 in the second direction DR2 and a width of the first upper gatesignal line 151 in the second direction DR2 may be constant. Forexample, a width of the first lower gate signal line 131 in the seconddirection DR2 outside the overlapping area OA may be substantially equalto the width 131W of the first lower gate signal line 131 in the seconddirection DR2 inside the overlapping area OA, and a width of the firstupper gate signal line 151 in the second direction DR2 outside theoverlapping area OA may be substantially equal to the width 151W of thefirst upper gate signal line 151 in the second direction DR2 inside theoverlapping area OA. In other words, the widths of the first lower gatesignal line 131 both inside and outside of the overlapping area OA inthe second direction DR2 may be substantially equal. Similarly, thewidths of the first upper gate signal line 151 both inside and outsideof the overlapping area OA in the second direction DR2 may besubstantially equal.

FIG. 24 is a layout diagram illustrating an example of the area A inFIG. 13. FIG. 25 is a layout diagram illustrating an example of the areaA in FIG. 13.

Referring to FIG. 24, in an embodiment, the first lower gate signal line131 may be recessed in the second direction DR2 in a plan view in theoverlapping area OA. In such an embodiment, a portion of the first lowergate signal line 131 outside the overlapping area OA may not overlap thefirst upper gate signal line 151, and the first lower gate signal line131 may have a recessed portion 131R recessed in the second directionDR2 in the overlapping area OA. For example, a width of the first lowergate signal line 131 in the second direction DR2 outside the overlappingarea OA may be greater than a width 131W of the first lower gate signalline 131 in the second direction DR2 inside the overlapping area OA, anda width of the first upper gate signal line 151 in the second directionDR2 outside the overlapping area OA may be substantially equal to awidth 151W of the first upper gate signal line 151 in the seconddirection DR2 inside the overlapping area OA.

Referring to FIG. 25, in an embodiment, the first upper gate signal line151 may protrude in the second direction DR2 in a plan view in theoverlapping area OA. In such an embodiment, a portion of the first lowergate signal line 131 outside the overlapping area OA may not overlap thefirst upper gate signal line 151, and the first upper gate signal line151 may have a protruding portion 151P protruding in the seconddirection DR2 in the overlapping area OA. For example, a width of thefirst lower gate signal line 131 in the second direction DR2 outside theoverlapping area OA may be substantially equal to a width 131W of thefirst lower gate signal line 131 in the second direction DR2 inside theoverlapping area OA, and a width of the first upper gate signal line 151in the second direction DR2 outside the overlapping area OA may be lessthan a width 151W of the first upper gate signal line 151 in the seconddirection DR2 inside the overlapping area OA.

FIG. 26 is a layout diagram illustrating an example of the pixel PX inFIG. 2. A pixel described with reference to FIG. 26 may be substantiallythe same as or similar to the pixel described with FIGS. 3 to 16 exceptfor the structure of the first connection pattern 1162 and the positionof the third contact hole CH3. Accordingly, descriptions on repeatedelements will be omitted.

Referring to FIG. 26, in an embodiment, the third contact hole CH3electrically connecting the second active layer 140 and the firstconnection pattern 1162 may not overlap the first gate signal line 121.In other words, the third contact hole CH3 and the first gate signalline 121 may be spaced apart from each other in a plan view.Accordingly, a path for compensating the threshold voltage of the firsttransistor T1 through the second active layer 140, the third contacthole CH3, and the first connection pattern 1162 may not overlap thefirst gate signal line 121 transmitting the first gate signal.

In a case that the third contact hole CH3 may overlap the first gatesignal line 121, (in other words, in a case that the path forcompensating the threshold voltage of the first transistor T1 mayoverlap the first gate signal line 121), a resistance of the secondactive layer 140 may increase due to the first gate signal which thefirst gate signal line 121 transmits, therefore, on-current of the thirdtransistor T3 may decrease. However, in an embodiment, the third contacthole CH3 electrically connecting the second active layer 140 and thefirst connection pattern 1162 may not overlap the first gate signal line121, so that the first gate signal which the first gate signal line 121transmits may not substantially affect the path for compensating thethreshold voltage of the first transistor T1. Accordingly, the decreaseof the on-current of the third transistor T3 due to the increase of theresistance of the second active layer 140 may be prevented.

The display device according to embodiments may be applied to a displaydevice included in a computer, a notebook, a mobile phone, a smartphone,a smart pad, a PMP, a PDA, an MP3 player, or the like within the spiritand the scope of the disclosure.

Although the display devices according to embodiments have beendescribed with reference to the drawings, the illustrated embodimentsare examples, and may be modified and changed without departing from thetechnical spirit described in the following claims.

What is claimed is:
 1. A display device, comprising: a first transistor including a gate electrode disposed on a substrate; a second transistor including: a lower gate electrode disposed on the substrate; an upper gate electrode disposed on the lower gate electrode; and a first end portion electrically connected to an end portion of the first transistor; a lower gate signal line extending in a first direction, a portion of the lower gate signal line forming the lower gate electrode; an upper gate signal line disposed on the lower gate signal line and extending in the first direction, a portion of the upper gate signal line forming the upper gate electrode; and a first connection pattern disposed on the upper gate signal line, electrically connecting the gate electrode and a second end portion of the second transistor, and intersecting the lower gate signal line and the upper gate signal line, wherein an entirety of the upper gate signal line overlaps a part of the lower gate signal line in an overlapping area in which the lower gate signal line or the upper gate signal line overlaps the first connection pattern.
 2. The display device of claim 1, wherein a width of the upper gate signal line in a second direction is less than a width of the lower gate signal line in the overlapping area in the second direction.
 3. The display device of claim 2, wherein a difference between the width of the lower gate signal line and the width of the upper gate signal line in the second direction is greater than about 1 μm.
 4. The display device of claim 2, wherein the first connection pattern extends in the overlapping area in the second direction.
 5. The display device of claim 2, wherein the widths of the first lower gate signal line both inside and outside of the overlapping area in the second direction are substantially equal, and the widths of the first upper gate signal line both inside and outside of the overlapping area in the second direction are substantially equal.
 6. The display device of claim 2, wherein the lower gate signal line protrudes in the second direction in the overlapping area in a plan view.
 7. The display device of claim 2, wherein the upper gate signal line is recessed in the second direction in the overlapping area in a plan view.
 8. The display device of claim 1, wherein the first transistor includes a first active layer disposed between the substrate and the gate electrode, and the second transistor includes a second active layer disposed between the lower gate electrode and the upper gate electrode, a first end portion of the second active layer being electrically connected to an end portion of the first active layer.
 9. The display device of claim 8, wherein the first active layer of the first transistor includes polycrystalline silicon, and the second active layer of the second transistor includes an oxide semiconductor.
 10. The display device of claim 8, wherein the first connection pattern electrically connects the gate electrode and a second end portion of the second active layer of the second transistor.
 11. The display device of claim 8, further comprising: a second connection pattern electrically connecting the end portion of the first active layer and the first end portion of the second active layer, wherein the first connection pattern and the second connection pattern are disposed on a same layer.
 12. A display device, comprising: a first transistor including a gate electrode disposed on a substrate; a second transistor including: a lower gate electrode disposed on the substrate; an upper gate electrode disposed on the lower gate electrode; and a first end portion electrically connected to an end portion of the first transistor; a lower gate signal line extending in a first direction, a portion of the lower gate signal line forming the lower gate electrode; an upper gate signal line disposed on the lower gate signal line and extending in the first direction, a portion of the upper gate signal line forming the upper gate electrode; and a first connection pattern disposed on the upper gate signal line, electrically connecting the gate electrode and a second end portion of the second transistor, and intersecting the lower gate signal line and the upper gate signal line, wherein an entirety of the lower gate signal line overlaps a part of the upper gate signal line in an overlapping area in which the lower gate signal line or the upper gate signal line overlaps the first connection pattern.
 13. The display device of claim 12, wherein a width of the upper gate signal line in a second direction is greater than a width of the lower gate signal line in the overlapping area in the second direction.
 14. The display device of claim 13, wherein a difference between the width of the upper gate signal line and the width of the lower gate signal line in the second direction is greater than about 1 μm.
 15. The display device of claim 13, wherein the first connection pattern extends in the overlapping area in the second direction.
 16. The display device of claim 13, wherein the widths of the first lower gate signal line both inside and outside of the overlapping area in the second direction are substantially equal, and the widths of the first upper gate signal line both inside and outside of the overlapping area in the second direction are substantially equal.
 17. The display device of claim 13, wherein the lower gate signal line is recessed in the second direction in the overlapping area in a plan view.
 18. The display device of claim 13, wherein the upper gate signal line protrudes in the second direction in the overlapping area in a plan view.
 19. The display device of claim 12, wherein the first transistor includes a first active layer disposed between the substrate and the gate electrode, and the second transistor includes a second active layer disposed between the lower gate electrode and the upper gate electrode, a first end portion of the second active layer being electrically connected to an end portion of the first active layer.
 20. The display device of claim 19, wherein the first active layer of the first transistor includes polycrystalline silicon, and the second active layer of the second transistor includes an oxide semiconductor.
 21. The display device of claim 19, wherein the first connection pattern electrically connects the gate electrode and a second end portion of the second active layer of the second transistor.
 22. The display device of claim 19, further comprising: a second connection pattern electrically connecting the end portion of the first active layer and the first end portion of the second active layer, wherein the first connection pattern and the second connection pattern are disposed on a same layer. 